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Temperature-induced topological phase transition in HgTe quantum wells

机译:HgTe量子阱中温度诱导的拓扑相变

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摘要

We report a direct observation of temperature-induced topological phasetransition between trivial and topological insulator in HgTe quantum well. Byusing a gated Hall bar device, we measure and represent Landau levels in fancharts at different temperatures and we follow the temperature evolution of apeculiar pair of "zero-mode" Landau levels, which split from the edge ofelectron-like and hole-like subbands. Their crossing at critical magnetic field$B_c$ is a characteristic of inverted band structure in the quantum well. Bymeasuring the temperature dependence of $B_c$, we directly extract the criticaltemperature $T_c$, at which the bulk band-gap vanishes and the topologicalphase transition occurs. Above this critical temperature, the opening of atrivial gap is clearly observed.
机译:我们报告了在HgTe量子阱中琐碎的和拓扑绝缘子之间温度引起的拓扑相变的直接观察。通过使用门控霍尔棒设备,我们可以测量和表示不同温度下的扇形图中的Landau能级,并遵循非电子对“零模” Landau能级的温度演变,该对温度是从电子状和空穴状子带的边缘分开的。它们在临界磁场$ B_c $处的交叉是量子阱中反向带结构的特征。通过测量$ B_c $的温度依赖性,我们直接提取临界温度$ T_c $,在该温度下,体带隙消失,并且发生拓扑相变。在此临界温度以上,可以清楚地看到到达间隙的开口。

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